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Advanced Linear Devices, Inc. ALD1110EPAL
MOSFET 2N-CH 10V 8DIP
- Manufacturer
- Advanced Linear Devices, Inc.
- Datasheet
- Price
- 6.5
- Stock
- 100
Product Details
- Supplier Device Package
- 8-SOIC
- Series
- EPAD®
- Gate Charge (Qg) (Max) @ Vgs
- -
- FET Type
- 2 N-Channel (Dual) Matched Pair
- Drain to Source Voltage (Vdss)
- 10V
- Packaging
- Tube
- Input Capacitance (Ciss) (Max) @ Vds
- 2.5pF @ 5V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- -
- Part Status
- Active
- Power - Max
- 600mW
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 1.01V @ 1µA
- Operating Temperature
- 0°C ~ 70°C (TJ)
- Rds On (Max) @ Id, Vgs
- 500Ohm @ 5V