Alpha & Omega Semiconductor Inc. AOT13N50

Product Details

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 25V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Part Status

Active

Mounting Type

Through Hole

Package / Case

TO-262-3 Full Pack, I²Pak

Vgs(th) (Max) @ Id

4.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

550mOhm @ 6A, 10V

Series

-

Power Dissipation (Max)

28W (Tc)

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Packaging

Tube

Drain to Source Voltage (Vdss)

600V