Alpha & Omega Semiconductor Inc. AOW11S65

Product Details

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

29nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2660pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

2.25V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

4.5mOhm @ 40A, 10V

Series

HEXFET®

Power Dissipation (Max)

115W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220AB