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Diodes Incorporated 2N7002H-7
MOSFET N-CH 60V 0.17A SOT23-3
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 11404
Product Details
- Series
- Automotive, AEC-Q101, TrenchMOS™
- Power Dissipation (Max)
- 340mW (Ta), 2.7W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- DFN1006-3
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 0.35nC @ 5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 50V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 36pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 230mA (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- SC-101, SOT-883
- Vgs(th) (Max) @ Id
- 2.1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7.5Ohm @ 100mA, 10V