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Diodes Incorporated DMN1019USN-7
MOSFET N-CH 12V 9.3A SC59
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 21064
Product Details
- Vgs(th) (Max) @ Id
- 950mV @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 50mOhm @ 4.3A, 4.5V
- Series
- HEXFET®
- Power Dissipation (Max)
- 1.3W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- Micro3™/SOT-23
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 12V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 830pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4.3A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3