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Diodes Incorporated DMN10H170SK3-13
MOSFET N-CH 100V 12A TO252
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 8574
Product Details
- Series
- TrenchFET®
- Power Dissipation (Max)
- 2.5W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- SOT-23-3 (TO-236)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 29nC @ 4.5V
- Vgs (Max)
- ±5V
- Drain to Source Voltage (Vdss)
- 8V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1485pF @ 4V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 6A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.2V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 800mV @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 30mOhm @ 5.3A, 4.5V