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EPC EPC2010
GANFET TRANS 200V 12A BUMPED DIE
- Manufacturer
- EPC
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- GANFET TRANS 200V 12A BUMPED DIE
Product Details
- Technology
- GaNFET (Gallium Nitride)
- Input Capacitance (Ciss) (Max) @ Vds
- 145pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3A (Ta)
- Part Status
- Discontinued at Digi-Key
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- -40°C ~ 125°C (TJ)
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 3A, 5V
- Series
- eGaN®
- Power Dissipation (Max)
- -
- FET Type
- N-Channel
- Supplier Device Package
- Die
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 1.8nC @ 5V
- Vgs (Max)
- +6V, -5V
- Drain to Source Voltage (Vdss)
- 200V