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EPC EPC2010C
GANFET TRANS 200V 22A BUMPED DIE
- Manufacturer
- EPC
- Datasheet
- Price
- 0
- Stock
- 8237
Product Details
- Vgs(th) (Max) @ Id
- 2.5V @ 15mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.6mOhm @ 30A, 5V
- Series
- eGaN®
- Power Dissipation (Max)
- -
- FET Type
- N-Channel
- Supplier Device Package
- Die
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 17nC @ 5V
- Vgs (Max)
- +6V, -4V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- GaNFET (Gallium Nitride)
- Input Capacitance (Ciss) (Max) @ Vds
- 1800pF @ 300V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 31A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Mounting Type
- Surface Mount
- Package / Case
- Die