Images are for reference only. See Product Specifications for product details
EPC EPC2012
GANFET TRANS 200V 3A BUMPED DIE
- Manufacturer
- EPC
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- GANFET TRANS 200V 3A BUMPED DIE
Product Details
- Rds On (Max) @ Id, Vgs
- 600mOhm @ 3.3A, 10V
- Series
- CoolMOS™
- Power Dissipation (Max)
- 60W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D²PAK (TO-263AB)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 27nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 550pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 6.1A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 3.5V @ 220µA
- Operating Temperature
- -55°C ~ 150°C (TJ)