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EPC EPC2012

GANFET TRANS 200V 3A BUMPED DIE

Manufacturer
EPC
Datasheet
Price
0
Stock
0

Product Details

Rds On (Max) @ Id, Vgs
600mOhm @ 3.3A, 10V
Series
CoolMOS™
Power Dissipation (Max)
60W (Tc)
FET Type
N-Channel
Supplier Device Package
D²PAK (TO-263AB)
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
600V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
550pF @ 100V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
6.1A (Tc)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
3.5V @ 220µA
Operating Temperature
-55°C ~ 150°C (TJ)