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EPC EPC2015
GANFET TRANS 40V 33A BUMPED DIE
- Manufacturer
- EPC
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- GANFET TRANS 40V 33A BUMPED DIE
Product Details
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3Ohm @ 1.5A, 10V
- Series
- -
- Power Dissipation (Max)
- 74W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 8nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 500V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 331pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole