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EPC EPC2018
GANFET TRANS 150V 12A BUMPED DIE
- Manufacturer
- EPC
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- GANFET TRANS 150V 12A BUMPED DIE
Product Details
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 240A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number
- IRFS8408
- Vgs(th) (Max) @ Id
- 3.9V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Series
- HEXFET®
- Rds On (Max) @ Id, Vgs
- 1mOhm @ 100A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 294W (Tc)
- Packaging
- Tape & Reel (TR)
- Supplier Device Package
- D2PAK
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 315nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 40V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 10250pF @ 25V