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EPC EPC2019
GAN TRANS 200V 8.5A BUMPED DIE
- Manufacturer
- EPC
- Datasheet
- Price
- 0
- Stock
- 10905
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 36A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Vgs(th) (Max) @ Id
- 2.5V @ 5mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7mOhm @ 25A, 5V
- Series
- eGaN®
- Power Dissipation (Max)
- -
- FET Type
- N-Channel
- Supplier Device Package
- Die Outline (11-Solder Bar)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 9nC @ 5V
- Vgs (Max)
- +6V, -4V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- GaNFET (Gallium Nitride)
- Input Capacitance (Ciss) (Max) @ Vds
- 900pF @ 50V