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EPC EPC2100ENG
GAN TRANS 2N-CH 30V BUMPED DIE
- Manufacturer
- EPC
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Feature
- GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C
- 9.5A, 38A
- Part Status
- Discontinued at Digi-Key
- Power - Max
- -
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Vgs(th) (Max) @ Id
- 2.5V @ 2mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 11.5mOhm @ 20A, 5V
- Supplier Device Package
- Die
- Series
- eGaN®
- Gate Charge (Qg) (Max) @ Vgs
- 2.7nC @ 5V
- FET Type
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 60V
- Packaging
- Tray
- Input Capacitance (Ciss) (Max) @ Vds
- 300pF @ 30V