Images are for reference only. See Product Specifications for product details
EPC EPC2102ENG
GAN TRANS 2N-CH 60V BUMPED DIE
- Manufacturer
- EPC
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Supplier Device Package
- Die
- Series
- eGaN®
- Gate Charge (Qg) (Max) @ Vgs
- 6.5nC @ 5V
- FET Type
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 80V
- Packaging
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds
- 760pF @ 40V
- FET Feature
- GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C
- 23A
- Part Status
- Active
- Power - Max
- -
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Vgs(th) (Max) @ Id
- 2.5V @ 7mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 5.5mOhm @ 20A, 5V