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EPC EPC2106ENGRT
GAN TRANS 2N-CH 100V BUMPED DIE
- Manufacturer
- EPC
- Datasheet
- Price
- 0
- Stock
- 9587
Product Details
- FET Type
- 2 N-Channel (Dual) Common Source
- Drain to Source Voltage (Vdss)
- 120V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 80pF @ 60V
- FET Feature
- GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C
- 3.4A
- Part Status
- Active
- Power - Max
- -
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Vgs(th) (Max) @ Id
- 2.5V @ 700µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 60mOhm @ 4A, 5V
- Supplier Device Package
- Die
- Series
- eGaN®
- Gate Charge (Qg) (Max) @ Vgs
- 0.8nC @ 5V