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EPC EPC2110ENGRT
GAN TRANS 2N-CH 120V BUMPED DIE
- Manufacturer
- EPC
- Datasheet
- Price
- 0
- Stock
- 11681
Product Details
- Power - Max
- -
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Vgs(th) (Max) @ Id
- 2.5V @ 4mA, 2.5V @ 16mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
- Supplier Device Package
- Die
- Series
- eGaN®
- Gate Charge (Qg) (Max) @ Vgs
- 4.9nC @ 15V, 19nC @ 15V
- FET Type
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 475pF @ 15V, 1960pF @ 15V
- FET Feature
- GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C
- 10A (Ta), 40A (Ta)
- Part Status
- Active