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EPC EPC2111ENGRT
GAN TRANS ASYMMETRICAL HALF BRID
- Manufacturer
- EPC
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- GAN TRANS ASYMMETRICAL HALF BRID
Product Details
- Operating Temperature
- 0°C ~ 70°C (TJ)
- Rds On (Max) @ Id, Vgs
- 500Ohm @ 4.8V
- Supplier Device Package
- 16-PDIP
- Series
- EPAD®
- Gate Charge (Qg) (Max) @ Vgs
- -
- FET Type
- 4 N-Channel, Matched Pair
- Drain to Source Voltage (Vdss)
- 10.6V
- Packaging
- Tube
- Input Capacitance (Ciss) (Max) @ Vds
- 2.5pF @ 5V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 12mA, 3mA
- Part Status
- Active
- Power - Max
- 500mW
- Mounting Type
- Through Hole
- Package / Case
- 16-DIP (0.300", 7.62mm)
- Vgs(th) (Max) @ Id
- 810mV @ 1µA