Images are for reference only. See Product Specifications for product details
EPC EPC8009
GANFET TRANS 65V 2.7A BUMPED DIE
- Manufacturer
- EPC
- Datasheet
- Price
- 0
- Stock
- 951
Product Details
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 48nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1680pF @ 300V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 20A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id
- 3.7V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 155mOhm @ 10A, 10V
- Series
- DTMOSIV
- Power Dissipation (Max)
- 45W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220SIS