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GeneSiC Semiconductor 1N1190A
DIODE GEN PURP 600V 40A DO5
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 11.89
- Stock
- 318
Product Details
- Package / Case
- TO-247-3
- Capacitance @ Vr, F
- 860pF @ 1V, 1MHz
- Supplier Device Package
- PG-TO247-3
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 220µA @ 650V
- Voltage - DC Reverse (Vr) (Max)
- 650V
- Speed
- No Recovery Time > 500mA (Io)
- Current - Average Rectified (Io)
- 30A (DC)
- Series
- CoolSiC™+
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Tube
- Voltage - Forward (Vf) (Max) @ If
- 1.7V @ 30A
- Diode Type
- Silicon Carbide Schottky
- Part Status
- Active
- Mounting Type
- Through Hole