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GeneSiC Semiconductor 1N1206A
DIODE GEN PURP 600V 12A DO4
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- DIODE GEN PURP 600V 12A DO4
Product Details
- Series
- -
- Operating Temperature - Junction
- -65°C ~ 200°C
- Packaging
- Bulk
- Voltage - Forward (Vf) (Max) @ If
- 1.1V @ 12A
- Diode Type
- Standard, Reverse Polarity
- Part Status
- Active
- Mounting Type
- Chassis, Stud Mount
- Package / Case
- DO-203AA, DO-4, Stud
- Base Part Number
- 1N3671AR
- Capacitance @ Vr, F
- -
- Supplier Device Package
- DO-4
- Current - Reverse Leakage @ Vr
- 10µA @ 50V
- Voltage - DC Reverse (Vr) (Max)
- 800V
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 12A