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GeneSiC Semiconductor 1N8033-GA
DIODE SCHOTTKY 650V 4.3A TO276
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Supplier Device Package
- TO-257
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 5µA @ 650V
- Speed
- No Recovery Time > 500mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 650V
- Series
- -
- Current - Average Rectified (Io)
- 9.4A (DC)
- Packaging
- Tube
- Operating Temperature - Junction
- -55°C ~ 250°C
- Diode Type
- Silicon Carbide Schottky
- Voltage - Forward (Vf) (Max) @ If
- 1.34V @ 10A
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-257-3
- Base Part Number
- 1N8034
- Capacitance @ Vr, F
- 1107pF @ 1V, 1MHz