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GeneSiC Semiconductor 2N7636-GA

TRANS SJT 650V 4A TO276

Manufacturer
GeneSiC Semiconductor
Datasheet
Price
0
Stock
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Product Details

FET Type
N-Channel
Supplier Device Package
8-DFN (3x3)
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
5.3nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
60V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
285pF @ 30V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta), 8A (Tc)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
7V, 10V
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
3.3V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
145mOhm @ 3A, 10V
Series
SDMOS™
Power Dissipation (Max)
3.1W (Ta), 16.7W (Tc)