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GeneSiC Semiconductor GA04JT17-247
TRANS SJT 1700V 4A TO-247AB
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 31.1
- Stock
- 27
Product Details
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-264-3, TO-264AA
- Vgs(th) (Max) @ Id
- 6.5V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 460mOhm @ 13A, 10V
- Series
- HiPerFET™, PolarP2™
- Power Dissipation (Max)
- 960W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-264AA (IXFK)
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 225nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 1200V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 16000pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 26A (Tc)