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GeneSiC Semiconductor GA05JT12-247

TRANS SJT 1200V 5A

Manufacturer
GeneSiC Semiconductor
Datasheet
Price
0
Stock
0

Product Details

Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
-
Operating Temperature
175°C (TJ)
Rds On (Max) @ Id, Vgs
140mOhm @ 10A
Series
-
Power Dissipation (Max)
170W (Tc)
FET Type
-
Supplier Device Package
TO-247AB
Packaging
Tube
Drain to Source Voltage (Vdss)
1200V
Vgs (Max)
-
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
-
FET Feature
-