GeneSiC Semiconductor GA100JT12-227

Product Details

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

150V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1820pF @ 75V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

4V @ 90µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

20mOhm @ 50A, 10V

Series

OptiMOS™

Power Dissipation (Max)

150W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO220-3