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GeneSiC Semiconductor GA10JT12-263
TRANS SJT 1200V 25A
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 19.24
- Stock
- 721
Product Details
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 40A (Tc)
- Mounting Type
- Chassis Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- ISOTOP
- Base Part Number
- STE40
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- 150°C (TJ)
- Series
- PowerMESH™ II
- Rds On (Max) @ Id, Vgs
- 130mOhm @ 20A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 460W (Tc)
- Packaging
- Tube
- Supplier Device Package
- ISOTOP®
- Vgs (Max)
- ±30V
- Gate Charge (Qg) (Max) @ Vgs
- 430nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 11100pF @ 25V