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GeneSiC Semiconductor GA50JT06-258
TRANS SJT 600V 100A
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 626.75
- Stock
- 0
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 78pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 170mA (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 2.3V @ 50µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 6Ohm @ 170mA, 10V
- Series
- SIPMOS®
- Power Dissipation (Max)
- 360mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-23-3
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 2.5nC @ 10V