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GeneSiC Semiconductor GA50JT12-247
TRANS SJT 1.2KV 50A
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 100.99
- Stock
- 11
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 20A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 1.9V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7.3mOhm @ 10A, 10V
- Series
- NexFET™
- Power Dissipation (Max)
- 3.2W (Ta), 37W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-VSONP (3x3.15)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 22.2nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1590pF @ 15V