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GeneSiC Semiconductor MBR60035CT
DIODE MODULE 35V 300A 2TOWER
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- DIODE MODULE 35V 300A 2TOWER
Product Details
- Reverse Recovery Time (trr)
- 90ns
- Current - Reverse Leakage @ Vr
- 25µA @ 50V
- Voltage - DC Reverse (Vr) (Max)
- 400V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - Forward (Vf) (Max) @ If
- 1.35V @ 100A
- Series
- -
- Current - Average Rectified (Io) (per Diode)
- 200A (DC)
- Packaging
- Bulk
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Chassis Mount
- Package / Case
- Three Tower
- Diode Configuration
- 1 Pair Common Cathode
- Supplier Device Package
- Three Tower