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GeneSiC Semiconductor MUR2X120A06
DIODE GEN PURP 600V 120A SOT227
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- DIODE GEN PURP 600V 120A SOT227
Product Details
- Reverse Recovery Time (trr)
- 105ns
- Current - Reverse Leakage @ Vr
- 50µA @ 600V
- Voltage - DC Reverse (Vr) (Max)
- 600V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 175°C
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 1.6V @ 60A
- Packaging
- Bulk
- Current - Average Rectified (Io) (per Diode)
- 87A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Chassis Mount
- Package / Case
- SOT-227-4, miniBLOC
- Diode Configuration
- 2 Independent
- Supplier Device Package
- SOT-227