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GeneSiC Semiconductor MURT10040R

DIODE ARRAY GP REV POLAR3TOWER

Manufacturer
GeneSiC Semiconductor
Datasheet
Price
87.54
Stock
100

Product Details

Supplier Device Package
Three Tower
Reverse Recovery Time (trr)
75ns
Current - Reverse Leakage @ Vr
25µA @ 50V
Voltage - DC Reverse (Vr) (Max)
600V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction
-40°C ~ 175°C
Series
-
Voltage - Forward (Vf) (Max) @ If
1.7V @ 100A
Packaging
Bulk
Current - Average Rectified (Io) (per Diode)
100A (DC)
Diode Type
Standard
Part Status
Active
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Configuration
-