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GeneSiC Semiconductor MURT10060R
DIODE ARRAY GP REV POLAR 3TOWER
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 87.54
- Stock
- 100
Product Details
- Series
- -
- Current - Average Rectified (Io) (per Diode)
- 400A (DC)
- Packaging
- Bulk
- Diode Type
- Schottky, Reverse Polarity
- Part Status
- Active
- Mounting Type
- Chassis Mount
- Package / Case
- Twin Tower
- Diode Configuration
- 1 Pair Common Anode
- Supplier Device Package
- Twin Tower
- Current - Reverse Leakage @ Vr
- 1mA @ 35V
- Voltage - DC Reverse (Vr) (Max)
- 35V
- Operating Temperature - Junction
- -55°C ~ 150°C
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - Forward (Vf) (Max) @ If
- 700mV @ 200A