Images are for reference only. See Product Specifications for product details
GeneSiC Semiconductor MURT20060
DIODE MODULE 600V 200A 3TOWER
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 93.46
- Stock
- 100
Product Details
- Part Status
- Active
- Mounting Type
- Chassis Mount
- Package / Case
- Twin Tower
- Diode Configuration
- 1 Pair Common Anode
- Supplier Device Package
- Twin Tower
- Reverse Recovery Time (trr)
- 90ns
- Current - Reverse Leakage @ Vr
- 25µA @ 50V
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 150°C
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 1.3V @ 125A
- Packaging
- Bulk
- Current - Average Rectified (Io) (per Diode)
- 400A (DC)
- Diode Type
- Standard