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GeneSiC Semiconductor MURTA20060R
DIODE GEN PURP 600V 100A 3 TOWER
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 104.63
- Stock
- 100
Product Details
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Chassis Mount
- Package / Case
- Three Tower
- Diode Configuration
- 1 Pair Common Cathode
- Supplier Device Package
- Three Tower
- Reverse Recovery Time (trr)
- 180ns
- Current - Reverse Leakage @ Vr
- 25µA @ 50V
- Voltage - DC Reverse (Vr) (Max)
- 400V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 150°C
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 1.35V @ 200A
- Packaging
- Bulk
- Current - Average Rectified (Io) (per Diode)
- 400A (DC)