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GeneSiC Semiconductor MURTA400120R

DIODE GEN 1.2KV 200A 3 TOWER

Manufacturer
GeneSiC Semiconductor
Datasheet
Price
121.73
Stock
100

Product Details

Current - Reverse Leakage @ Vr
25µA @ 200V
Voltage - DC Reverse (Vr) (Max)
200V
Operating Temperature - Junction
-55°C ~ 150°C
Speed
Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If
1.3V @ 200A
Series
-
Current - Average Rectified (Io) (per Diode)
200A
Packaging
Bulk
Diode Type
Standard
Part Status
Active
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Configuration
1 Pair Common Cathode
Supplier Device Package
Three Tower