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GeneSiC Semiconductor MURTA50060R

DIODE MODULE 600V 500A 3TOWER

Manufacturer
GeneSiC Semiconductor
Datasheet
Price
0.2
Stock
10000
Description
DIODE MODULE 600V 500A 3TOWER

Product Details

Package / Case
Three Tower
Diode Configuration
1 Pair Common Cathode
Supplier Device Package
Three Tower
Current - Reverse Leakage @ Vr
25µA @ 1200V
Voltage - DC Reverse (Vr) (Max)
1200V
Operating Temperature - Junction
-55°C ~ 150°C
Speed
Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If
2.6V @ 250A
Series
-
Current - Average Rectified (Io) (per Diode)
250A
Packaging
Bulk
Diode Type
Standard
Part Status
Active
Mounting Type
Chassis Mount