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GeneSiC Semiconductor S6JR
DIODE GEN PURP REV 600V 6A DO4
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- DIODE GEN PURP REV 600V 6A DO4
Product Details
- Capacitance @ Vr, F
- -
- Supplier Device Package
- DO-4
- Current - Reverse Leakage @ Vr
- 10µA @ 100V
- Voltage - DC Reverse (Vr) (Max)
- 800V
- Current - Average Rectified (Io)
- 6A
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Operating Temperature - Junction
- -65°C ~ 175°C
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 1.1V @ 6A
- Packaging
- Bulk
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Chassis, Stud Mount
- Package / Case
- DO-203AA, DO-4, Stud