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Global Power Technologies Group GP1M004A090FH
MOSFET N-CH 900V 4A TO220F
- Manufacturer
- Global Power Technologies Group
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 4Ohm @ 2A, 10V
- Series
- -
- Power Dissipation (Max)
- 123W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 900V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 955pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)