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Global Power Technologies Group GP1M004A090H
MOSFET N-CH 900V 4A TO220
- Manufacturer
- Global Power Technologies Group
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.6Ohm @ 1.7A, 10V
- Series
- -
- Power Dissipation (Max)
- 50W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D-Pak
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 7.1nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 400V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 522pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3.4A (Tc)