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Global Power Technologies Group GP1M004A090H

MOSFET N-CH 900V 4A TO220

Manufacturer
Global Power Technologies Group
Datasheet
Price
0
Stock
0

Product Details

Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
1.6Ohm @ 1.7A, 10V
Series
-
Power Dissipation (Max)
50W (Tc)
FET Type
N-Channel
Supplier Device Package
D-Pak
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
7.1nC @ 10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
400V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
522pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
3.4A (Tc)