Global Power Technologies Group GP1M005A050H

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4620pF @ 13V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

44A (Ta), 260A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

2.1V @ 100µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.1mOhm @ 50A, 10V

Series

FASTIRFET™, HEXFET®

Power Dissipation (Max)

3.5W (Ta), 125W (Tc)

FET Type

N-Channel

Supplier Device Package

PQFN (5x6)

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

74nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

25V