Global Power Technologies Group GP1M006A070FH

Product Details

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

650V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1201pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.4Ohm @ 3.25A, 10V

Series

-

Power Dissipation (Max)

120W (Tc)

FET Type

N-Channel

Supplier Device Package

D-Pak

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V