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Global Power Technologies Group GP1M009A020CG
MOSFET N-CH 200V 9A DPAK
- Manufacturer
- Global Power Technologies Group
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 400mOhm @ 4.5A, 10V
- Series
- -
- Power Dissipation (Max)
- 52W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 8.6nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 200V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 414pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9A (Tc)