Global Power Technologies Group GP1M009A020HG

Product Details

FET Type

N-Channel

Supplier Device Package

I-PAK

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

8.6nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

200V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

414pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

400mOhm @ 4.5A, 10V

Series

-

Power Dissipation (Max)

52W (Tc)