Global Power Technologies Group GP1M010A060FH

Product Details

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

900V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2336pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.05Ohm @ 5A, 10V

Series

-

Power Dissipation (Max)

312W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-3PN