Global Power Technologies Group GP1M018A020PG

Product Details

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

500V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3094pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

300mOhm @ 10A, 10V

Series

-

Power Dissipation (Max)

312W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-3PN

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V