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Global Power Technologies Group GP2M008A060PGH

MOSFET N-CH 600V 7.5A IPAK

Manufacturer
Global Power Technologies Group
Datasheet
Price
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Stock
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Product Details

FET Feature
-
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Vgs(th) (Max) @ Id
5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
700mOhm @ 5A, 10V
Series
-
Power Dissipation (Max)
52W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-220F
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
600V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1660pF @ 25V