Global Power Technologies Group GP2M020A060N

Product Details

Package / Case

3-XFDFN

Vgs(th) (Max) @ Id

1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

100mOhm @ 2A, 4.5V

Series

-

Power Dissipation (Max)

480mW (Ta)

FET Type

P-Channel

Supplier Device Package

X2-DFN1010-3

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

5.8nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

12V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

514pF @ 5V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Mounting Type

Surface Mount