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Global Power Technologies Group GSID150A120S6A4
SILICON IGBT MODULES
- Manufacturer
- Global Power Technologies Group
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- SILICON IGBT MODULES
Product Details
- IGBT Type
- Trench
- Input Capacitance (Cies) @ Vce
- 5.35nF @ 25V
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 4mA
- Power - Max
- 355W
- Voltage - Collector Emitter Breakdown (Max)
- 1200V
- Configuration
- Three Phase Inverter
- Mounting Type
- Chassis Mount
- NTC Thermistor
- Yes
- Package / Case
- E2
- Base Part Number
- MWI
- Operating Temperature
- -40°C ~ 125°C (TJ)
- Supplier Device Package
- E2
- Input
- Standard
- Vce(on) (Max) @ Vge, Ic
- 2.15V @ 15V, 75A
- Series
- -
- Current - Collector (Ic) (Max)
- 110A