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Global Power Technologies Group GSID150A120T2C1
SILICON IGBT MODULES
- Manufacturer
- Global Power Technologies Group
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- SILICON IGBT MODULES
Product Details
- Operating Temperature
- -40°C ~ 125°C (TJ)
- Supplier Device Package
- D3
- Vce(on) (Max) @ Vge, Ic
- 2.45V @ 15V, 200A
- Input
- Standard
- Current - Collector (Ic) (Max)
- 300A
- Series
- -
- Input Capacitance (Cies) @ Vce
- 18nF @ 25V
- IGBT Type
- Trench Field Stop
- Current - Collector Cutoff (Max)
- 3mA
- Part Status
- Active
- Voltage - Collector Emitter Breakdown (Max)
- 1700V
- Power - Max
- 1250W
- Configuration
- Half Bridge
- Mounting Type
- Chassis Mount
- NTC Thermistor
- No
- Package / Case
- D-3 Module