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Infineon Technologies 65DN06ELEMXPSA1
DIODE GEN PURP 600V 8470A
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- DIODE GEN PURP 600V 8470A
Product Details
- Capacitance @ Vr, F
- -
- Supplier Device Package
- -
- Reverse Recovery Time (trr)
- 2µs
- Current - Reverse Leakage @ Vr
- 1µA @ 1000V
- Voltage - DC Reverse (Vr) (Max)
- 1000V
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 15A
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- -
- Voltage - Forward (Vf) (Max) @ If
- 1.2V @ 9A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- -
- Package / Case
- -